Beta

Samsung Foundry

Samsung Electronics Foundry Division · Founded 2017 · South Korea flag Hwaseong, South Korea

0% of AI chips005930.KSgaa-pioneeryield-challengeshbm-leader-memory
0
AI chips tracked

Samsung's contract foundry division, second largest globally. Pioneered GAA (Gate-All-Around) transistors at 3nm before TSMC. Fabricates some Qualcomm, Google, and NVIDIA chips. Yield issues at 3nm have limited AI chip wins versus TSMC.

Nodes
4
AI chips
0
Frontier chips
0
Fabs
3
Employees
20,000
Revenue
$12.5B
Market cap
CEO
Kyehyun Kyung

From quarterly earnings disclosures

QuarterAdvancedMaturePackaging
2025-Q1
65%
55%
70%
2024-Q4
60%
52%
65%
2024-Q3
55%
50%
60%
2024-Q2
50%
48%
55%

4 nodes · from mature to bleeding-edge

4LPPVolume
2023

4nm Low Power Plus · Qualcomm Snapdragon, some Google Tensor

230 MTr/mm²
3GAARamping
2024

3nm Gate-All-Around · first commercial GAA node · yield challenges

290 MTr/mm²
2GAADevelopment
2026

2nm GAA · Samsung's next-gen node · competing with TSMC N2 and Intel 18A

370 MTr/mm²
SF5Volume
2021

5nm · Google Tensor G2/G3, some Qualcomm

170 MTr/mm²

Interposer, 3D stacking, and chiplet tech

I-Cube4volume

2.5D interposer with 4 HBM stacks · Samsung's CoWoS competitor

X-Cuberamping

3D stacking · SRAM-on-logic · early AI packaging

Disclosed reservations and contracts

CompanyBooked thru
2026
2025
2026

3 facilities globally

S5 LineActive
Hwaseong, South Korea
3GAA4LPP
Taylor FabUnder construction
Taylor, Texas, USA
4LPP2GAA
P3 LineActive
Pyeongtaek, South Korea
5nm4LPP

Headquarters and global footprint

HQ
South Korea flagHwaseong, South Korea
Fab countries
South Korea flagSouth KoreaUSA flagUSA
Ticker
005930.KS

Every data point on this page is reproducible

Compare across the foundry landscape